EE Product News

Power MOSFET Technology Slashes On-Resistance

Multiple Drain mesh (MDmesh), a new power-MOSFET technology, claims to cut on-resistance by a factor of three or four, depending on voltage. The technology combines the company's MeshOverlay horizontal layout with a drain structure based on a multiple vertical p-stripe drain. This structure results in excellent dV/dt and avalanche characteristics, while the strip layout geometry gives a dynamic performance that is better than similarly rated products. Available devices are the STP12NM50, a 500V/0.35 ohm maximum power FET in a TO-220, and STD5NM50, a 500V/0.8 ohm maximum FET in a DPAK package. Pricing for the STP12NM50 is $1.30 and the STD5NM50 costs $0.65, each/10,000.


Product URL: Click here for more information

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.