Multiple Drain mesh (MDmesh), a new power-MOSFET technology, claims to cut on-resistance by a factor of three or four, depending on voltage. The technology combines the company's MeshOverlay horizontal layout with a drain structure based on a multiple vertical p-stripe drain. This structure results in excellent dV/dt and avalanche characteristics, while the strip layout geometry gives a dynamic performance that is better than similarly rated products. Available devices are the STP12NM50, a 500V/0.35 ohm maximum power FET in a TO-220, and STD5NM50, a 500V/0.8 ohm maximum FET in a DPAK package. Pricing for the STP12NM50 is $1.30 and the STD5NM50 costs $0.65, each/10,000.
Company: STMICROELECTRONICS INC.
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