RF Power LDMOS Transistor Is Low-Voltage Device

May 1, 2000
Designed for both narrow and wideband data and voice communication, this 7.5V, 6W RF power LDMOSFET surface-mount transistor exhibits 10 dB gain at 500 MHz. It is not internally matched and performs well down to dc. Data sheets, Spice models, and

Designed for both narrow and wideband data and voice communication, this 7.5V, 6W RF power LDMOSFET surface-mount transistor exhibits 10 dB gain at 500 MHz. It is not internally matched and performs well down to dc. Data sheets, Spice models, and S-Parameters are available at the firm's web site.

Company: POLYFET RF DEVICES

Product URL: Click here for more information

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