SMPS IGBTs Improve Power Density And Efficiency

Dec. 1, 2001
Offered as replacements for 500V and 600V MOSFETs in switch-mode power supplies (SMPSs), the SMPS II IGBT next generation IGBTs have a reduced gate drive voltage of 8V to 10V. It is reported that SMPS II IGBT technology improves power density, system

Offered as replacements for 500V and 600V MOSFETs in switch-mode power supplies (SMPSs), the SMPS II IGBT next generation IGBTs have a reduced gate drive voltage of 8V to 10V. It is reported that SMPS II IGBT technology improves power density, system efficiency and reliability, and enables operation up to 150 kHz without current derating compared to MOSFETs. The devices are available in four die sizes, with and without anti-parallel stealth diodes, and in 14 die package combinations for power supply applications from 500W to 4 kW. Prices range from $1.46 to $9.28 each in OEM quantities. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (888) 522-5372.

Company: FAIRCHILD SEMICONDUCTOR

Product URL: Click here for more information

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