New members of a radiation-hardened (rad-hard) MOSFET family are designed to protect devices against single-event effects (SEEs) in outer space. The company's enhanced power MOSFET immunity to a SEE—particularly to single-event gate rupture (SEGR)—can be combined with 100,000 radiation-absorbed-dose (RAD) hardness to yield devices ideal for harsh space environments. These MOSFETs are enhancement-mode, silicon-gate, power field-effect transistors of the vertical double-diffused metal-oxide semiconductor (DMOS) structure. Two models in this family, the FSJ163 and FSYC163, represent n-channel, 130-V dice, size six, in enhanced TO-254 and SMD2 packages, respectively. The FSYC264 represents n-channel, 250-V dice, size six, in an SMD2 package. And, the FSJ360 and FSYC360 represent n-channel, 400-V dice, size six, in enhanced TO-254 and SMD2 packages, respectively. All of these devices are now available. Contact the company for pricing information.
Intersil Corp., 125 Crestwood Rd., Mountaintop, PA 18707; (888) 468-3774; Internet: www.intersil.com.
