Promising to significantly reduce real estate requirements for GSM/GPRS cellular handsets, the MMM5062 quad-band, 50_ power amplifier (PA) melds together high-impedance integrated power amplifier (HIIPA) packaging and enhanced-mode (E-mode) GaAs process technologies that eliminate the negative voltage generator and drain-supply switch found in the PA section of handsets using depletion-mode pHEMT and MESFET devices. The single-supply (6.0V) E-mode GaAs MESFET technology-based PA also eliminates the need for additional passive components. The PA’s 50_ impedance matching network is achieved through integration of passives on the GaAs die, with the internal 50_ I/O matching reportedly offering less design variance than can be is achieved by using passive components on a traditional radio board. In addition to a high-gain, three-stage amplifier design, the MMM5062 also sports a compact, 7 x 7-mm SMT plastic housing. Price is $3.95 each/10,000. For more details, call Bob Benzer at MOTOROLA, Semiconductor Products Sector, Phoenix, AZ. (480) 413-3840.
Company: MOTOROLA - Semiconductor Products Sector
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