Energy-Efficient IGBTs and RC-IGBTs Target 400/800-V EV Systems
Responding to the growing demand for high-voltage automotive IGBT chips, Infineon Technologies developed a new generation of products: the EDT3 (Electric Drive Train, 3rd generation) chips designed for 400- and 800-V systems, and its RC-IGBT chips tailored specifically for 800-V systems. Both devices are available as bare dies, making it easier for customers to create custom power modules.
Created to enhance the performance and reliability of electric drivetrain systems, the EDT3’s structure was optimized to minimize chip losses and increase the maximum junction temperature to balance high-load performance and low-load efficiency. As a result, it’s able to achieve up to 20% lower total losses at high loads (versus the EDT2) while maintaining efficiency at low loads.
The EDT3 devices, available in 750- and 1,200-V classes, can sustain a maximum virtual junction temperature of 185°C. This makes it possible for automakers to design more efficient and reliable powertrains that can help extend an EV’s range or reduce its battery capacity requirements.
The 1,200-V RC-IGBT achieves higher performance by integrating IGBT and diode functions on a single die for even higher current density compared to separate IGBT and diode chipset solutions. Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK Drive G2 automotive power-module family, which offers a power range of up to 250 kW.
Both device families can be ordered with customized chip layouts, including on-chip temperature and current sensors. In addition, metallization options for sintering, soldering, and bonding are available on request. The new EDT3 and RC-IGBT devices are already available for sampling. Further information can be found here.
