Underscoring the utility of its PowiGaN gallium-nitride (GaN) technology in powering next-generation AI data centers, Power Integrations recently outlined the capabilities of 1,250- and 1,700-V PowiGaN technology for 800-V DC power architectures. It was presented in a white paper published at the 2025 OCP Global Summit in San Jose, where NVIDIA also provided an update on the 800-V DC architecture in a collaboration to accelerate the transition to 800-V DC power and megawatt-scale racks.
The paper reveals the performance advantages of 1,250-V PowiGaN HEMTs, highlighting their field-proven reliability and their ability to meet the power density and efficiency requirements for 800-V DC architectures. It also demonstrates that a single 1,250-V PowiGaN switch delivers greater power density and efficiency compared to stacked 650-V GaN FETs and competing 1,200-V silicon-carbide (SiC) devices.
One example can be found in Power Integrations’ InnoMux 2-EP ICs, a solution for auxiliary power supplies in 800-V DC data centers. The device’s integrated 1,700-V PowiGaN switch accepts a 1,000-V DC input voltage, while its SR ZVS (synchronous rectifier, zero voltage switching) operation delivers over 90.3% efficiency in a liquid-cooled, fanless system.
A key benefit of GaN technology is that it can run at high frequencies with an almost negligible switching loss, enabling it to outperform 1,200-V SiC in terms of efficiency. This solution offers easy integration and control while reducing the external component count.
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