Gallium-nitride (GaN) high electron mobility transistors (HEMTs) have a limited avalanche capability. Thus, they may frequently experience catastrophic failures in voltage overshoot up to their dynamic breakdown voltage (BVdyn).1 Unfortunately, some very critical application-oriented knowledge gaps remain for the overvoltage ruggedness of GaN power HEMTs.
The ongoing activity of GaN power HEMT device recovery after an overvoltage stress and the recovery acceleration event are critical for device users; however, their recovery remains unknown. An appreciable change in internal carrier dynamics may occur in GaN power HEMTs at an overvoltage/surge approaching BVdyn.