Power Integrations announced that its PowiGaN gallium-nitride (GaN) technology is now rated at up to 2,200 V, exceeding the voltage capabilities of other commercially available GaN technologies. It’s expected to enable higher power density, greater efficiency, and safer and simpler system architectures for AI data centers, electric vehicles, photovoltaics, and HVDC infrastructure.

PowiGaN ICs rated at 1,700 V are already being designed into single-stage data center auxiliary power applications, while 1,250-V PowiGaN offers a simpler alternative to stacked solutions in the main power path in 800-V DC data centers. The introduction of 2,200-V PowiGaN technology means that even higher bus architectures can be supported, future-proofing power designs not only for data centers but also for EVs, photovoltaic inverters, and battery energy storage systems (BESS).

“Our 2,200-V PowiGaN technology provides substantial voltage margin for emerging high-voltage power systems while enabling the high switching frequencies required to maximize power density,” said Jennifer Lloyd, president and CEO at Power Integrations.

She added, “Emerging applications include next-generation AI data centers, where industry roadmaps point toward 1,500-V distribution architectures, as well as future EV battery and auxiliary power systems operating at increasingly higher output voltages (48 V). This milestone breakthrough extends the reach of GaN into voltage ranges traditionally served by SiC, enabling a compelling high-frequency alternative for applications such as solar, HVDC. and advanced industrial power conversion.”

For additional information, you can read Power Integrations’ white paper.