High-Temperature 1200 V/10 A SiC MOSFET
CISSOID introduces CHT-NEPTUNE, a high-voltage power switch in TO-257 package, suitable for power converters and motor drives guaranteed for reliable operation up to +225°C.
CHT-NEPTUNE is a high-temperature, high-voltage, Silicon Carbide MOSFET specifically built for power converter applications in high-temperature and harsh environments. It is available in a hermetically-sealed TO-257 metal package - the case being isolated from the switch terminals - and features low junction-to-case thermal resistance (1.1°C/W). The product is guaranteed for reliable operation on the full range -55°C to +225°C. It has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A at the maximum temperature (Tj=225°C). The device features a body diode that can be used as free-wheeling diode.
The switch can be controlled with a typical gate voltage (VGS) of -2V / +20V. The transistor's RDS-ON exhibits 90mohm at 25°C and 150mΩ at 225°C with VGS=20V. Support and characterization data can also be provided to drive the transistor at lower VGS voltages (e.g. 5V or 10V). This new device features low - and temperature-independent - switching energy of less than 400µJ at 600V/10A.
CISSOID was already offering the first isolated gate driver solution for SiC with 225°C rating (HADEST); with this addition the company can now offer a complete, turnkey, solution combining the gate driver and the power switches, saving months of expensive and painful R&D for our customers.
CHT-NEPTUNE can be used together with CISSOID gate drivers CHT-THEMIS & ATLAS, and with the fully isolated half-bridge gate driver EVK-HADES. The combination HADES+NEPTUNE will save months of R&D to system designers when designing a motor drive or a power converter.
A product datasheet is available now from CISSOID's website (datasheet link). CHT-NEPTUNE can be ordered for sampling and evaluation under the part number CHT-PLA8543-TO257-T. Pricing starts at $387.96 for 51 to 200 units.
