RF Power Transistors Support 728–2700 MHz With Single Device

Two new Airfast RF power LDMOS transistors from Freescale, the AFT27S006N and AFT27S010N, cover all major cellular infrastructure bands while delivering 20 to 24 dB of gain in a compact package. The AFT27S006N delivers 6 W of peak power (0.76 W avg.) and is the next-generation of the MW6S004N, a workhorse driver deployed in wireless infrastructure installations worldwide. The AFT27S010N is a higher power device delivering 10 W of peak power (1.26 W avg.). Both devices operate from 28 Vdc and feature a 728 to 2700 MHz frequency range and single-stage gain (20 to 24 dB), together with an ultra-small footprint package (PLD-1.5 W), suiting them for macro base station MIMO applications rated up to 40 W average power. The broad frequency range of the new transistors enables them to also be used as universal driver devices for a wide array of additional RF applications. The AFT27S006N and AFT27S010N Airfast RF power transistors are in production now.

FREESCALE SEMICONDUCTOR INC.