EE Product News

70-nm Process Enables 2 GB NAND Flash

By stacking two 70-nm, 8-Gb multi-level cell (MLC) NAND chips, the TH58NVG4D4CTG 16-Gb NAND flash memory provides 2 GB of storage in a single TSOP measuring 12 mm x 20 mm x 1.2 mm. Reportedly, this makes it the highest density MLC NAND flash component available to date. The part is based on the TC58NVG3D4CTG 8-Gb MLC NAND, which employs fast writing circuit techniques to support a write speed of 6 MB/s. Addressing upcoming deadlines for RoHS compliance, the memory is available in lead-free, surface-mount packages with tin-silver or tin-copper plating. Specs include a 2,028M x 8-bit configuration, operating voltage from 2.7V to 3.6V, and a page size of 2,112 bytes. Price is $79 each. For further information, calll TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., Irvine, CA. (949) 623-2900.


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TAGS: Digital ICs
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