Wide-bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) are essential to the development of high-efficiency traction inverters that can help EV s become increasingly competitive with their internal-combustion-engine (ICE) counterparts. However, their fast switching characteristics and other unique properties also raise several design challenges that must be overcome before their full benefits can be realized.
This article explores a number of techniques, generally classified as “soft switching,” that can be used to help WBG-based inverters achieve their full potential.