Targeting a wide range of applications in quad-band GSM and GPRS designs, the RMPA1958-99 power amplifier module has an overall frequency range of 824 MHz to 1.91 GHz and employs a proprietary InGaP MMIC technology together with a CMOS control circuit. Features include internal, 50_ input and output matching with internal dc blocking and a leadless chip-carrier module design with on-board band select and output power control. The 11.6 x 9.1 x 1.6 mm module operates from a supply voltage of 3.5V and delivers an output power of 35 dBm for GSM applications, 32.5 dBm for DCS, and 31.5 dBm for PCS with an efficiency of 55% for US Cell/GSM and 50% for DCS/PCS. Output power is set with a variable power control voltage of 1.9V maximum and the total leakage current at shutoff is in the µA range. RAYTHEON RF COMPONENTS, Andover, MA. (978) 684-8900.
Company: RAYTHEON RF COMPONENTS
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