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Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it.
The world is heading into the age of gate-all-around (GAA) or nanosheet transistors. While it was never going to save Moore’s Law by itself, the new device is opening the door...
A digitally calibrated, charge-pump phase-locked loop presented by imec at the recent ISSCC can generate high-quality FMCW signals for millimeter-wave radars with low power consumption...
With solid-state batteries, electric vehicles should be able to achieve an autonomy (driving range) matching—and eventually surpassing—that of cars with an internal combustion...
Scientists from imec’s IDLab demonstrated a 120-Gbaud transmitter IC that implements a SiGe BiCMOS multiplexer, equalizer, and driver. The architecture significantly increases...
Indium-gallium-zinc-oxide (IGZO) thin-film transistors provide the backing for a wide range of displays. This article dives into the technology and recent advances to overcome...
Coventor, a supplier of design technology for micro-electromechanical systems (MEMS), and the nanoelectronics research center Imec have announced a strategic partnership to improve...
Osaka, Japan and Leuven, Belgium: Panasonic Corp. and nanoelectronics research centre IMEC signed a research contract to work together on advanced technologies in the semiconductor...
