EE Product News

P-Channel MOSFET Offers Miniscule On-Resistance

A single P-channel MOSFET delivers higher levels of efficiency and a small form factor to designers of smart phones, cell phones, net books, medical and other portable applications. The FDZ197PZ offers an RDS(ON) value of 64 m? at VGS = -4.5V, which is 15% less than competing devices. Not only that, but the device comes in a 1 mm x 1.5 mm footprint, reducing board space requirements. The WL-CSP package provides excellent power dissipation and conduction losses characteristics compared to conventional plastic-packaged MOSFETs in a similar footprint. Unlike other MOSFETs in its class, the FDZ197PZ offers robust ESD capability (4 kV), protecting the device from stresses caused by ESD events that could potentially disable the application. The MOSFET is fabricated with the company’s PowerTrench MOSFET process technology, making it possible to achieve lower RDS(ON) and higher load currents in smaller package sizes. The package is terminated with six 300-µm lead-free solder balls for the board connection, providing excellent electrical and thermal resistance values compared to other WL-CSP pinouts. Package height is just 0.65 mm when mounted, facilitating slimmer designs. Pricing is $0.35 each in lots of 1000; samples are available now. Production quantities are delivered in eight to 12 weeks after receipt of order. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (408) 822-2000.


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