With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of critical importance. The relatively high conduction losses of MOSFET accentuate IGBT as a better choice for most of the applications requiring blocking voltages >1000 V and switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various applications between the kW and MW power range [1]. In IGBT power modules, IGBTs are integrated with Free Wheeling Diodes (FWD) to protect them from inductive switching. The losses associated with the FWDs in these modules have a significant impact on the circuit efficiencies. SiC Schottky diodes as FWDs in the IGBT modules provide zero reverse recovery losses, low reverse leakage currents, exceptional thermal properties, thereby improving the overall circuit efficiencies.