Aug. 16. 2021 - Electronic Design Today

The chip takes over the slot held by Qualcomm’s Snapdragon chips in every generation of Google’s Pixel smartphone, which the technology giant debuted in 2016.

With so much hype around the launch of 5G, it’s no mystery why industrial IoT users are asking themselves when and how they can leverage its promised benefits. Many of the initial...

With all the buzz surrounding edge computing these days, perhaps you're thinking it’s time to invest in intelligent edge technologies for your IoT network. What are the key factors...

In a major breakthrough, Factorial Energy reached a capacity retention rate of 97.3% after 675 cycles for a 40-Ah cell at 25°C.

A TWS development kit shortens the design cycle for OEMs and gets Bluetooth-enabled earbuds and headphones with advanced AI features more quickly to market.

Using an unconventional fabrication technique, researchers have created ultra-thin, ultra-flexible, high-performance electronics including active devices.

A few big tier-1 suppliers have dominated the auto electronics market. But with the rise of EVs and AVs, non-tier-1 suppliers are no longer left with the slim pickings of aftermarket...

Marvell said the deal would help it to take part in the market for merchant Ethernet switch silicon for data centers, which the company estimates will grow 15% every year for ...

One can’t be too careful when it comes to safeguarding sensitive RF and microwave technology, especially when it involves potential military applications by adversaries.

Sponsored by Texas Instruments: Embedded software development is a multidimensional effort that you can address by leveraging open-source compiler tools and operating systems....

The latest oscilloscopes deliver fast insights thanks to enhanced usability and performance, and represent the challenges manufacturers face delivering the latest test functionality...

Among the features of Microchip’s new 1,700-V modules are significantly increased efficiency, higher switching frequency, and improved gate-oxide stability.