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    • Silicon Carbide

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    Power

    WBG Power Transistors Push the High-Power Envelope

    Though cost remains an issue, wide-bandgap GaN-on-Si and SiC transistors are expected to make inroads in mid-range to high-end designs for lower-power (200 V) and higher-power...
    Powerelectronics 3400 03549 Genesic Semiconductor
    Silicon Carbide

    General Purpose High Temperature SiC Transistors and Rectifiers

    GeneSiC Semiconductor announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages...
    Powerelectronics 2891 112414cree
    Silicon Carbide

    All-SiC Power Module Produces 1.7 kV

    Cree, Inc. released the industry's first all-SiC 1.7kV power module in an industry standard 62mm housing.
    Powerelectronics 2482 251020genesic20semiconductor
    Silicon Carbide

    Silicon Carbide Junction Transistors

    GeneSiC Semiconductor announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors.
    Powerelectronics 3032 Waferprobe
    Discrete Power Semis

    Design Considerations for SiC-based Power Electronics

    SiC properties are recognized as being advantageous for fabrication of power devices. Although substrate costs and defect densities are decreasing, SiC is not yet as mature and...
    Powerelectronics 3033 Jfetsictransistor
    Discrete Power Semis

    650V 55mohm SiC JFETs

    SemiSouth Laboratories are delivering what is said to be the industry's first 650V 55mΩ SiC JFETs
    Powerelectronics 3034 Jfetsic
    Power

    Isolated Gate Driver HADES® For Semisouth Normally-Off SiC JFET

    CISSOID introduces a new version of HADES®, its turnkey isolated gate driver reference design, tailored to support SEMISOUTH silicon carbide (SiC), normally-off power JFETs (SJEP120R100...